CoorsTek has specially developed high-purity, full-density PureSiC CVD silicon carbide to address the challenging demands of silicon wafer processing. PureSiC CVD silicon carbide has a purity of over 99.9995% with zero porosity. These qualities enable it to maintain the cleanliness of semiconductor production processes. Moreover, PureSiC CVD silicon carbide exhibits high strength and stiffness and low thermal mass, a key design parameter. These characteristics make them suitable for fabricating thin, lightweight components. The high thermal shock resistance of PureSiC CVD silicon carbide improves ramp rates and extends component life in RTP processes.
PureSiC CVD silicon carbide withstands cleaning processes by exhibiting very high resistance to high temperature in-situ etching with gaseous HCl and concentrated HF/HNO3 wet cleans. CoorsTek supplies this material in high-resistivity (HR) and low-resistivity (LR) grades for applications demanding specific electrical properties, and in high and low transmissivity grades for applications requiring optical or infrared transmissivity. PureSiC CVD silicon carbide’s near-net shape capabilities facilitate the fabrication of complex geometries.
PureSiC CVD silicon carbide has the cleanliness required for sophisticated semiconductor fabrication and other ultra-clean processes, thanks to its purity of over 99.9995%. The full-density material minimizes the chance of particles or cleaning solutions getting trapped in porous materials. The level of critical trace elements is maintained well below 1 ppm in bulk and the CVD process uses ultra-high-purity feed gases.
Figure 1. Individual bays for each CVD SiC reactor fitted with dedicated HEPA-filtration system.
CoorsTek offers PureSiC CVD silicon carbide in low-transmissivity LR grade and in the standard translucent HR grade for applications where an opaque silicon carbide is required.
The company’s proprietary optical testing capabilities help customers to ensure the potential of PureSiC CVD silicon carbide in fulfilling their optical requirements. PureSiC LR grade CVD silicon carbide is suitable for applications where a low-transmissivity material is required by optical temperature sensors or motion sensors. The transmittance vs. wavelength chart of PureSiC HR grade CVD silicon carbide and PureSiC LR grade CVD silicon carbide are shown in Figures 2 and 3.
CoorsTek also supplies its LR grade in thin-wall protective sheaths for use quick response thermocouples and optical temperature sensors.
CoorsTek provides PureSiC CVD silicon carbide in LR and HR grades for applications requiring low or high electrical resistivity. The combination of high purity, controlled resistivity and superior corrosion resistance makes PureSiC CVD silicon carbide the material of choice for static-dissipative, ion implant and plasma etch processes. PureSiC HR grade CVD silicon carbide exhibits very high resistivity of over 106 ohm-cm at room temperature, as shown in Figure 3.
Figure 4. PureSiC HR grade CVD silicon carbide has a resistivity greater than 106 ohm-cm at room temperature.
PureSiC LR grade CVD silicon carbide has a resistivity of below 0.1 ohm-cm, as illustrated in Figure 4.
Figure 5. PureSiC LR grade CVD silicon carbide has a resistivity of less than 0.1 ohm-cm.
CoorsTek also supplies custom grades for other resistivity requirements.
With advanced production technologies, CoorsTek is well positioned to offer sophisticated solutions in many different materials, including CVD silicon carbide, technical ceramics, plastics and metals. The company’s proprietary materials testing laboratory is one among the leading testing laboratories in the industry. Customers can use the service of CoorsTek team to select the best design and materials for manufacturability.